Gallium Semiconductor gives its first ISM CW amplifier, the GTH2e-2425300P, working from 2.4 GHz to 2.5 GHz with peak effectivity of 76% (pulsed). Measured knowledge for the 300-W prematched GaN-on-SiC HEMT exhibits a drain effectivity of over 72% below continuous-wave operation.
The GTH2e-2425300P brings excessive ranges of effectivity to a variety of commercial, scientific, and medical (ISM); RF power, and continuous-wave (CW) purposes, together with semiconductor plasma sources and microwave plasma chemical vapor deposition. Powered by a 50-V provide rail, the half has a small sign acquire of 17 dB typical at saturated energy. Drain supply breakdown voltage is 150 V.
The GTH2e-2425300P is available in an ACP-800 4-lead air-cavity plastic package deal with a ceramic matrix composite (CMC) flange, enhancing reliability and thermal efficiency (0.67°C/W). This customary air-cavity package deal additionally simplifies integration into varied RF techniques.
A hard and fast-tune demonstration board is offered for certified prospects. Contact gross firstname.lastname@example.org for pricing particulars and ordering data.
GTH2e-2425300P product web page
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